Semiconductor photoelectric conversion device

Today's pick up in solar cell / photovoltaic patents.

4,591,892 (May. 27 1986)

Semiconductor photoelectric conversion device.

Shumpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

Score=510/1000

Group->>_P4581476

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Photoelectric conversion device

Today's pick up in solar cell / photovoltaic patents.

4,581,476 (Apl. 08 1986)

Photoelectric conversion device.

Shunpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickness direction of the I-type layer.

Score=490/1000

Group->>_P4581476

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Method of producing hydrogenated amorphous silicon film.

Today's pick up in solar cell / photovoltaic patents.

4,237,150 (Dec. 02 1980)

Method of producing hydrogenated amorphous silicon film.

and HaroldJ. Wiesmann

The United States of America as represented by the United States

abstract:

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Score=410/1000

Group->>_P4196438

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Electrical contacts for a thin-film semiconductor device

Today's pick up in solar cell / photovoltaic patents.

4,854,974 (Aug. 08 1989)

Electrical contacts for a thin-film semiconductor device.

DavidE. Carlson, CharlesR. Dickson and RobertV. D'Aiello

Solarex Corporation

abstract:

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Score=530/1000

Group->>_P4196438

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Method for manufacturing electrical contacts for a thin-film semiconductor device.

Today's pick up in solar cell / photovoltaic patents.

4,783,421 (Nov. 08 1988)

Method for manufacturing electrical contacts for a thin-film semiconductor device.

DavidE. Carlson, CharlesR. Dickson and RobertV. D'Aiello

Solarex Corporation

abstract:

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Score=590/1000

Group->>_P4196438

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Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery.

Today's pick up in solar cell / photovoltaic patents.

4,292,092 (Sep. 29 1981)

Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery.

and JosephJ. Hanak

RCA Corporation

abstract:

A method of fabricating series-connected and tandem junction series-connected solar cells into a solar battery with laser scribing.

Score=440/1000

Group->>_P4196438

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Semiconductor body forming a solar cell with a bypass diode.

Today's pick up in solar cell / photovoltaic patents.

7,115,811 (Oct. 03 2006)

Semiconductor body forming a solar cell with a bypass diode.

Frank Ho, MiltonY. Yeh, Chaw-Long Chu and PeterA. IIes

EMCORE Corporation

abstract:

The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.

Score=730/1000 GOOD!

Group->>_P6278054

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