Inclined photovoltaic assembly.

Today's pick up in solar cell / photovoltaic patents.

6,809,251 (Oct. 26 2004)

Inclined photovoltaic assembly.

ThomasL. Dinwoodie

Powerlight Corporation

abstract:

A PV assembly comprises a base, having a length L, an upwardly extending PV module, having a length H, and a downwardly extending deflector. The PV module and the deflector are preferably secured to the base so that they are placeable at shipping and inclined-use angles. The module may be connected to the base by a living hinge. The deflector may comprise an outer surface having a solar reflectivity of at least about 0.2, and more preferably of at least about 0.7, whereby solar radiation contacting the outer surface may be redirected to an adjacent PV module to increase the power output of the adjacent PV module. The inclined-use angle of the PV module may be about 2.degree. to 15.degree. and a ground cover ratio of H/L may be about 0.6 to about 0.8 for increased power output.

Score=570/1000

Group->>_P6495750

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Photovoltaic assembly array with covered bases.

Today's pick up in solar cell / photovoltaic patents.

6,501,013 (Dec. 31 2002)

Photovoltaic assembly array with covered bases.

ThomasL. Dinwoodie

PowerLight Corporation

abstract:

The invention is directed to an array of photovoltaic (PV) assemblies mountable to a support surface. Each PV assembly comprises a base, a PV module and a support assembly securing the PV module to a position overlying the upper surface of the base. The base comprises a main member and a cover defining the upper surface of the base; the cover comprises an electrical conductor. An electrical ground connector may be made between the covers of different PV assemblies. The cover may comprise sheet metal and may have an electrically-insulating surface layer. The main member may be a thermal insulator and the cover may comprise a low-emissivity layer. The covers of adjacent PV assemblies may be interengaged so that wind uplift forces on one of the PV assemblies tend to transfer to adjacent the assemblies so to help counteract the wind uplift forces.

Score=390/1000

Group->>_P6495750

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Semiconductor body forming a solar cell with a bypass diode.

Today's pick up in solar cell / photovoltaic patents.

7,115,811 (Oct. 03 2006)

Semiconductor body forming a solar cell with a bypass diode.

Frank Ho, MiltonY. Yeh, Chaw-Long Chu and PeterA. IIes

EMCORE Corporation

abstract:

The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.

Score=730/1000 GOOD!

Group->>_P6278054

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Photovoltaic module

Today's pick up in solar cell / photovoltaic patents.

5,981,867 (Nov. 09 1999)

Photovoltaic module.

Noboru Toyama and Katsumi Nakagawa

Canon Kabushiki Kaisha

abstract:

A photovoltaic device comprises a metal with a smooth surface; a transparent conductive layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent conductive layer. The transparent conductive layer has an irregular surface at a side opposite to the smooth surface.

Score=590/1000

Group->>_P5500055

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Photovoltaic device

Today's pick up in solar cell / photovoltaic patents.

5,885,725 (Mar. 23 1999)

Photovoltaic device.

Noboru Toyama and Katsumi Nakagawa

Canon Kabushiki Kaisha

abstract:

A photovoltaic device comprises a metal with a smooth surface; a transparent conductive layer formed on the smooth surface; and a photoelectric conversion layer formed on the transparent conductive layer. The transparent conductive layer has an irregular surface at a side opposite to the smooth surface.

Score=560/1000

Group->>_P5500055

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Low bandgap photovoltaic cell with inherent bypass diode.

Today's pick up in solar cell / photovoltaic patents.

5,389,158 (Feb. 14 1995)

Low bandgap photovoltaic cell with inherent bypass diode.

LewisM. Fraas and JamesE. Avery

The Boeing Company[*]

abstract:

A photovoltaic (PV) cell with a single pn-junction is disclosed that is capable of functioning as both a current source and a bypass diode. The photovoltaic cell is made of material that has a low bandgap energy, 1.0 eV, or less. One version of the PV cell is formed of a GaSb wafer doped with Te to form an n-region; the Te concentration is between 6 and 10.times.10.sup.17 atoms/cm.sup.3. Multiple PV cells of this invention can be connected in series or in parallel or in tandem in a primary-booster tandem pair to form a circuit without the requirement of protecting the individual cells of the circuit with a separate bypass diode.

Score=580/1000

Group->>_P5091018

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Terrestrial concentrator solar cell module

Today's pick up in solar cell / photovoltaic patents.

5,118,361 (Jun. 02 1992)

Terrestrial concentrator solar cell module.

LewisM. Fraas, Nurullah Mansoori, NamsooP. Kim and JamesE. Avery

The Boeing Company

abstract:

Solar cells, particularly GaAs/GaSb tandem solar cells, are mechanically and electrically connected in the form of a string using a flexible circuit tape and mounted in optical alignment with solar energy concentrators in a module. A heat spreader body is attached to each cell unit as part of a heat sink and the cells are precisely positioned to provide optical alignment. The flexible circuit tape is formed by conductive strips sandwiched between layers of polymer dielectric tape and provided with tabs at predefined holes in the tape for bonding to current carrying surfaces of concentrated sunlight tandem solar cell units.

Score=540/1000

Group->>_P5091018

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Semiconductor having low concentration of carbon

Today's pick up in solar cell / photovoltaic patents.

6,028,264 (Feb. 22 2000)

Semiconductor having low concentration of carbon.

Shunpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4.times.10.sup.18 atoms/cm.sup.3.

Score=760/1000 GOOD!

Group->>_P4581476

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Nonsingle crystal semiconductor and a semiconductor device using such semiconductor.

Today's pick up in solar cell / photovoltaic patents.

5,391,893 (Feb. 21 1995)

Nonsingle crystal semiconductor and a semiconductor device using such semiconductor.

Shunpei Yamazaki

Semicoductor Energy Laboratory Co., Ltd.

abstract:

A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer disposed on the non-single-crystal semiconductor layer. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5.times.10.sup.18 atoms/cm.sup.3 or less.

Score=610/1000

Group->>_P4581476

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Photoelectric conversion device.

Today's pick up in solar cell / photovoltaic patents.

5,349,204 (Sep. 20 1994)

Photoelectric conversion device.

Shunpei Yamazaki

Semiconductor Energy Laboratory, Co., Ltd.

abstract:

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.

Score=610/1000

Group->>_P4581476

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Photoelectric conversion device and method of making the same.

Today's pick up in solar cell / photovoltaic patents.

5,077,223 (Dec. 31 1991)

Photoelectric conversion device and method of making the same.

Shunpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.

Score=490/1000

Group->>_P4581476

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Semiconductor photoelectric conversion device

Today's pick up in solar cell / photovoltaic patents.

4,591,892 (May. 27 1986)

Semiconductor photoelectric conversion device.

Shumpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5.times.10.sup.18 atoms/cm.sup.3 or less, 4.times.10.sup.18 atoms/cm.sup.3 or less, or 5.times.10.sup.15 atoms/cm.sup.3 or less, respectively.

Score=510/1000

Group->>_P4581476

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Photoelectric conversion device

Today's pick up in solar cell / photovoltaic patents.

4,581,476 (Apl. 08 1986)

Photoelectric conversion device.

Shunpei Yamazaki

Semiconductor Energy Laboratory Co., Ltd.

abstract:

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickness direction of the I-type layer.

Score=490/1000

Group->>_P4581476

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Method of producing hydrogenated amorphous silicon film.

Today's pick up in solar cell / photovoltaic patents.

4,237,150 (Dec. 02 1980)

Method of producing hydrogenated amorphous silicon film.

and HaroldJ. Wiesmann

The United States of America as represented by the United States

abstract:

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Score=410/1000

Group->>_P4196438

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Electrical contacts for a thin-film semiconductor device

Today's pick up in solar cell / photovoltaic patents.

4,854,974 (Aug. 08 1989)

Electrical contacts for a thin-film semiconductor device.

DavidE. Carlson, CharlesR. Dickson and RobertV. D'Aiello

Solarex Corporation

abstract:

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Score=530/1000

Group->>_P4196438

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Method for manufacturing electrical contacts for a thin-film semiconductor device.

Today's pick up in solar cell / photovoltaic patents.

4,783,421 (Nov. 08 1988)

Method for manufacturing electrical contacts for a thin-film semiconductor device.

DavidE. Carlson, CharlesR. Dickson and RobertV. D'Aiello

Solarex Corporation

abstract:

A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

Score=590/1000

Group->>_P4196438

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Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery.

Today's pick up in solar cell / photovoltaic patents.

4,292,092 (Sep. 29 1981)

Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery.

and JosephJ. Hanak

RCA Corporation

abstract:

A method of fabricating series-connected and tandem junction series-connected solar cells into a solar battery with laser scribing.

Score=440/1000

Group->>_P4196438

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Semiconductor body forming a solar cell with a bypass diode.

Today's pick up in solar cell / photovoltaic patents.

7,115,811 (Oct. 03 2006)

Semiconductor body forming a solar cell with a bypass diode.

Frank Ho, MiltonY. Yeh, Chaw-Long Chu and PeterA. IIes

EMCORE Corporation

abstract:

The present invention is directed to systems and methods for protecting a solar cell. The solar cell includes first solar cell portion. The first solar cell portion includes at least one junction and at least one solar cell contact on a backside of the first solar cell portion. At least one bypass diode portion is epitaxially grown on the first solar cell portion. The bypass diode has at least one contact. An interconnect couples the solar cell contact to the diode contact.

Score=730/1000 GOOD!

Group->>_P6278054

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