Method of producing hydrogenated amorphous silicon film.

Today's pick up in solar cell / photovoltaic patents.

4,237,150 (Dec. 02 1980)

Method of producing hydrogenated amorphous silicon film.

and HaroldJ. Wiesmann

The United States of America as represented by the United States

abstract:

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Score=410/1000

Group->>_P4196438

Cerbonics HOME
Den.Ya.Mon's blog
USP analysis portal

data_name: Solar cell / photovoltaic patents TOP

Search in Cerbonics data by GOOGLE.
Tips: data_name and (What you want to know).